| 摘要 |
883,289. Semi-conductor rectifiers. INTERMETALL GES. FUR METALLURGIE UND ELEKTRONIK. April 21, 1960 [Aug. 22, 1959], No. 14036/60. Class 37. In a method of hermetically sealing a semiconductor device all the soldering operation incidental to the sealing, except one, are performed before etching the semi-conductor, and the final soldering is between parts so shaped that vapours produced during the soldering are prevented from reaching the semi-conductor surface. The connecting lead to the semiconductor is sealed to the casing by a coldwelding process. In Fig. 2, a semi conductor wafer 6 is attached to two pot-shaped members 7 and 8 by soldering, the assembly then being etched. A stranded tinned copper conductor 4 is attached to part 8 by compressing the sides of the pot on the wire 4. The assembly is then secured to the base member 1 by solder layer 9, vapour produced during this soldering operation being prevented from reaching the surface of semiconductor layer 6 owing to the close fit of the sides of pot 7 in annular groove 2. The connecting lead 4 is passed through copper tube 10, Fig. 1, of the metal to glass/ceramic gland 5, after which the metal rim 3 is pressed in to seal the gland to the base 1 via layer 11 of a soft metal, e.g. tin or a lead silver alloy. The casing may then be evacuated, and if required, gas filled, through tube 10, after which the tube is compressed on to wire 4 to form an air-tight seal. |
