发明名称 Method for manufacturing a semiconductor device
摘要 To provide a method of efficiently configuring a circuit requiring high inter-device consistency by using thin-film transistors. A semiconductor layer is formed on a substrate and is patterned into desired shapes to form first semiconductor islands. The first semiconductor islands are uniformly crystallized by laser irradiation within the surface areas thereof. Thereafter, the semiconductor layers are patterned into desired shapes to become active layers of the thin-film transistors layer. Active layers of all of thin-film transistors constituting one unitary circuit are formed of one of the first semiconductor islands in this case. Thus, the TFTs mutually realize high consistency.
申请公布号 KR100963811(B1) 申请公布日期 2010.06.16
申请号 KR20020081621 申请日期 2002.12.20
申请人 发明人
分类号 G02F1/1368;H01L29/786;H01L21/20;H01L21/268;H01L21/336;H01L21/77;H01L21/84;H01L27/12 主分类号 G02F1/1368
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