发明名称 |
Method of making a FinFET device structure having dual metal and high-k gates |
摘要 |
Methods include making a FinFET device structure having multiple FinFET devices (e.g. ntype and/or ptype) with different metal conductors and/or different high-k insulators in the gates formed on a SOI substrate. One such method includes removing a second semiconductor layer from a second metal layer in a region above a second cap layer, from adjoining regions and from regions adjacent to a second fin.
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申请公布号 |
US7736965(B2) |
申请公布日期 |
2010.06.15 |
申请号 |
US20070951552 |
申请日期 |
2007.12.06 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;DIVAKARUNI RAMACHANDRA |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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