发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
PURPOSE: A semiconductor memory device is provided to steadily implement an operation with decoding a row address by changing a swing domain of a control signal provided to a row address decoding circuit in an operation environment including relatively low potential level of a power supply. CONSTITUTION: A first level shifting unit(602) is level shifting a maximum level of an active command with swing between a potential level of a power supply voltage and the potential level of a ground voltage to a step-up voltage. A second level shifting unit is level shifting a lower limit level of a signal outputted from the first level shifting unit to a pressure reducing voltage. The second level shifting unit outputs a word line driving control signal. A row address decoding unit(622) decodes the row address with receiving the step-up voltage and the pressure reducing voltage in response to the word line driving control signal. The row address decoding unit selectively activates a plurality of word lines(WL 0~WL N). |
申请公布号 |
KR20100064871(A) |
申请公布日期 |
2010.06.15 |
申请号 |
KR20080123519 |
申请日期 |
2008.12.05 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
SONG, CHOUNG KI;HUR, YOUNG DO;KANG, YONG GU;LEE, YO SEP |
分类号 |
G11C8/10;G11C5/14;G11C8/04 |
主分类号 |
G11C8/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|