| 摘要 |
PURPOSE: An image sensor and a manufacturing method thereof are provided to minimize a light loss in transferring incident light to a photodiode by shortening a transfer path of the incident light. CONSTITUTION: A multilayered interlayer insulation layer with a plurality of metal wires is formed on a first substrate. A second substrate of a single crystal is bonded on the first substrate. A via hole is formed to expose the uppermost metal wire among the plurality of metal wires. A via contact is formed by filling a via hole with metal. A concave part(70) with an incline is formed by etching the part around the via contact. A plurality of photodiodes(80) with different depths is formed with one or more ion implantation process using different impurities on the incline of the concave part.
|
