发明名称 Method for manufacturing semiconductor device
摘要 In the present application, is disclosed a method of manufacturing a flexible semiconductor device having an excellent reliability and tolerance to the loading of external pressure. The method includes the steps of: forming a separation layer over a substrate having an insulating surface; forming an element layer including a semiconductor element comprising a non-single crystal semiconductor layer, over the separation layer; forming an organic resin layer over the element layer; providing a fibrous body formed of an organic compound or an inorganic compound on the organic resin layer; heating the organic resin layer; and separating the element layer from the separation layer. This method allows the formation of a flexible semiconductor device having a sealing layer in which the fibrous body is impregnated with the organic resin.
申请公布号 US7736958(B2) 申请公布日期 2010.06.15
申请号 US20080076149 申请日期 2008.03.14
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 DOZEN YOSHITAKA;SUGIYAMA EIJI;OHTANI HISASHI;TSURUME TAKUYA
分类号 H01L21/84 主分类号 H01L21/84
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