发明名称 VACUUM PROCESSING SYSTEM AND SUBSTRATE TRANSFER METHOD
摘要 A vacuum processing system is provided with a first processing section (2) wherein PVC processing chambers (12-15) are connected to a first transfer chamber (11) to which a wafer is to be transferred; a second processing section (3) wherein CVD processing chambers are connected to a second processing chamber (21) to which the wafer is to be transferred; a buffer chamber (5a), which is arranged between the first transfer chamber (11) and the second transfer chamber (12) through a gate valve (G), stores the wafer, and is capable of adjusting pressure therein; and a control section (110) for controlling opening/closing of a gate valve (G) and pressure in the buffer chamber (5a) so that the buffer chamber (5a) is selectively communicated with either the first transfer chamber (11) or the second transfer chamber (12) and that pressure inside matches with pressure inside the communicating transfer chamber.
申请公布号 KR20100065127(A) 申请公布日期 2010.06.15
申请号 KR20097027030 申请日期 2008.09.01
申请人 TOKYO ELECTRON LIMITED 发明人 MIYASHITA TETSUYA;HIRATA TOSHIHARU;HARA MASAMICHI
分类号 H01L21/677;H01L21/285;H01L21/3205 主分类号 H01L21/677
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