GROWTH OF PURE GE LAYER WITH LOW THREADIN DISLOCATION DENSITY

摘要

PURPOSE: A method for growing a germanium signal crystal thin film with low penetration dislocation density is provided to improve yield by performing a real time thermal process with a reduced pressure chemical vapor deposition method for a short time. CONSTITUTION: A germanium thin film(210) is grown on a silicon substrate(200) at a low temperature. A real time thermal process is performed for a short time. The germanium thin film is grown at a high temperature after the thermal process. In a step of growing the germanium thin film at the low temperature, the thin film with the thickness of 80 to 120 nm is grown under the process pressure of 30 to 80 torr at a deposition temperature of 300 to 500 degrees centigrade.