| 摘要 |
A method of making a semiconductor device includes a resin film forming step for forming a resin film on a semiconductor substrate 10 provided with electrode portions 11 to cover the electrode portions 11, an opening forming step for forming openings in the resin film at locations corresponding to the electrode portions 11, a loading step for loading a bump material in the openings, a bump forming step for forming bumps 41 in the openings by heating, and a removing step for removing the resin film. |
