发明名称 ORGANIC EL ELEMENT AND ORGANIC EL ELEMENT MANUFACTURING METHOD
摘要 A cathode electrode layer having a high density and step coverage property is formed on an electron implantation layer. An electron transporting material and an electron implanting material are co-deposited so as to form an electron-implantation layer as an organic thin film having an electron transporting property in which fine particles of electron-implanting material are dispersed. A cathode electrode layer formed by an MgAg alloy layer is formed on the surface of the electron-implantation layer by the sputtering method. Since the fine particles of the electron-implanting material dispersed on the surface of the organic thin film have lower portions buried in the organic thin film, they are not detached even if collided by the sputtering particles and their upper portions are brought into contact with the cathode electrode layer formed by the sputtering particles.
申请公布号 KR20100065174(A) 申请公布日期 2010.06.15
申请号 KR20107007116 申请日期 2008.09.26
申请人 ULVAC, INC. 发明人 NEGISHI TOSHIO
分类号 H01L51/54;H01L51/56;H05B33/10;H05B33/26 主分类号 H01L51/54
代理机构 代理人
主权项
地址