MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to precisely form a CD of patterns of a trench and a via when forming the pattern of a multilayer wiring of copper by forming the trench and the via below a resolution limit with a dual damascene method. CONSTITUTION: A first hard mask layer and a second hard mask layer are formed on a layer to be etched(S11). A mask pattern for forming a trench, which is comprised of a second mask layer and include a first pitch, is formed as an etching mask when forming a pattern of the trench(S12). A first hard mask layer is etched using a second resist layer with an opening formed with a fourth pitch and a second resist pattern which is composed of a first organic layer with a smaller opening than that of a second resist layer and is connected to the opening of the second resist layer(S15-S17).