| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a poly depletion in forming a gate by uniformly forming silicide on a poly gate. CONSTITUTION: A gate oxide layer(120) is formed on a semiconductor substrate. A poly gate(130) is formed on the gate oxide layer. A plurality of ion implantation layers with different ion implantation depth is formed on the poly gate by implanting a heat-resistance metal for forming the silicide on the poly gate with different ion implantation energy. The silicon silicide is formed by reacting a plurality of nickel ion implantation layers with the poly gates through a thermal annealing process.
|
