发明名称 |
Multiple reflection layer electrode, compound semiconductor light emitting device having the same and methods of fabricating the same |
摘要 |
Provided are a multiple reflection layer electrode, a compound semiconductor light emitting device having the same and methods of fabricating the same. The multiple reflection layer electrode may include a reflection layer on a p-type semiconductor layer, an APL (agglomeration protecting layer) on the reflection layer so as to prevent or retard agglomeration of the reflection layer, and a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL.
|
申请公布号 |
US7737456(B2) |
申请公布日期 |
2010.06.15 |
申请号 |
US20070808172 |
申请日期 |
2007.06.07 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
SONG JUNE-O;SEONG TAE-YEON;KIM KYOUNG-KOOK;HONG HYUN-GI;CHOI KWANG-KI;KIM HYUN-SOO |
分类号 |
H01L33/00;H01L33/06;H01L21/00;H01L33/10;H01L33/32;H01L33/42;H01L33/46 |
主分类号 |
H01L33/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|