发明名称 Narrow track extraordinary magneto resistive [EMR] device with wide voltage tabs and diad lead structure
摘要 A Lorenz magnetoresistive sensor having a pair of voltage leads and a pair of current leads. The voltage leads are located at either side of one of the current leads and are separated by a distance that is substantially equal to the length of a bit to be measured. The Lorenz magnetoresistive sensor can be, for example an extraordinary magnetoresistive sensor having a quantum well structure such as a two dimensional electron gas and a shunt structure formed on an edge of the quantum well structure opposite the voltage and current leads.
申请公布号 US7738219(B2) 申请公布日期 2010.06.15
申请号 US20080345724 申请日期 2008.12.30
申请人 HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V. 发明人 BOONE, JR. THOMAS DUDLEY;GURNEY BRUCE ALVIN;MARINERO ERNESTO E.;SMITH NEIL
分类号 G11B5/39;G11B5/37 主分类号 G11B5/39
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