发明名称 |
Trench junction barrier controlled Schottky device with top and bottom doped regions for enhancing forward current in a vertical direction |
摘要 |
A Schottky diode includes at least a trenched opened in a semiconductor substrate doped with a dopant of a first conductivity type wherein the trench is filled with a Schottky junction barrier metal. The Schottky diode further includes one or more dopant region of a second conductivity type surrounding sidewalls of the trench distributed along the depth of the trench for shielding a reverse leakage current through the sidewalls of the trench. The Schottky diode further includes a bottom-doped region of the second conductivity type surrounding a bottom surface of the trench and a top-doped region of the second conductivity type surrounding a top portion of the sidewalls of the trench. In a preferred embodiment, the first conductivity type is a N-type conductivity type and the middle-depth dopant region comprising a P-dopant region.
|
申请公布号 |
US7737522(B2) |
申请公布日期 |
2010.06.15 |
申请号 |
US20060541189 |
申请日期 |
2006.09.30 |
申请人 |
ALPHA & OMEGA SEMICONDUCTOR, LTD. |
发明人 |
LUI SIK K;BHALLA ANUP |
分类号 |
H01L29/47;H01L29/872 |
主分类号 |
H01L29/47 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|