ETCHANT COMPOSITIONS AND ETCHING METHOD FOR METALS CU/MO

摘要

The present invention provides an etchant composition suitable for etching metals Cu/Mo, wherein the composition comprises 1 to 25 wt% of hydrogen peroxide on the basis of the total weight of the composition; 0.1 to 15 wt% of amino acid on the basis of the total weight of the composition; 0.1 to 15 wt% of a pH stabilizer on the basis of the total weight of the composition; 0.01 to 2 wt% of fluorine-containing acid on the basis of the total weight of the composition; 0.01 to 3 wt% of an acidic pH adjuster on the basis of the total weight of the composition; and an aqueous medium. The present invention also provides a process for etching metals Cu/Mo with the etchant composition of the present invention.