| 发明名称 |
(AL, IN, GA, B)N DEVICE STRUCTURES ON A PATTERNED SUBSTRATE |
| 摘要 |
A nitride light emitting diode, on a patterned substrate, comprising a nitride interlayer having at least two periods of alternating layers of InGa_N and InGa_N where0 < x < 1 and 0 < y < 1, and a nitride based active region having at least one quantum well structure on the nitride interlayer.
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| 申请公布号 |
KR20100064383(A) |
申请公布日期 |
2010.06.14 |
| 申请号 |
KR20107008209 |
申请日期 |
2008.09.19 |
| 申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
IZA MICHAEL;SATO HITOSHI;HWANG, EU JIN;DENBAARS STEVEN P.;NAKAMURA SHUJI |
| 分类号 |
H01L33/06;H01L33/04;H01L33/12;H01L33/32 |
主分类号 |
H01L33/06 |
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