| 摘要 |
<p>PURPOSE: A semiconductor memory and a manufacturing method thereof are provided to simplify a photo process by forming a spherical polysilicon cluster inside a gate oxide layer with a multilayer structure. CONSTITUTION: A first gate oxide film(110) is formed on a semiconductor substrate. A second gate oxide film(120) is formed on the first gate oxide film. The second gate oxide film includes a spherical polysilicon cluster(210). A third gate oxide film is formed on the second gate oxide film. The polysilicon film is formed on the third gate oxide layer. A photoresist pattern is formed on the polysilicon film. A gate pattern is formed by etching using the photoresist pattern.</p> |
