HORIZONTAL DIFFUSION FURNACE FOR MANUFACTURING SEMICONDUCTOR

摘要

PURPOSE: A horizontally shaped diffusion furnace is provided to form a gate insulating layer with a superior thin film by uniformly injecting reaction gas in top, down, left and right direction of silicon wafer substrate. CONSTITUTION: A reaction chamber(21) comprises a reacting gas inlet. In the reaction chamber, the thermal diffusion process about the silicon wafer substrate is executed. A heating part heats the inside of the reaction chamber. A loading part(23) loads a plurality of silicon wafer substrates. A carrying part(24) transfers the loading part to the inside of the reaction chamber. A nitrogen gas injecting part(25) injects the nitrogen gas into the inside of the loading part.