THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A TFT(Thin Film Transistor) substrate and a method for manufacturing the same are provided to applied to a high-speed driving and ultra high precise product by reducing the channel length thereof. CONSTITUTION: A drain electrode(66) and a source electrode(65) are formed at the upper and lower parts of a semiconductor pattern(40), and a gate electrode(26) is formed at the one side of the semiconductor pattern. The portion near the gate electrode in the semiconductor pattern forms a channel region(P), and the width of the channel region is proportion to a duplicated area between the drain electrode and the source electrode. The length of the channel region is determined by the thickness of the semiconductor pattern.