GROWTH OF GE EPITAXIAL LAYER WITH NEGATIVE PHOTOCONDUCTANCE CHARACTERISTICS AND PHOTODIODE USING THE SAME

摘要

PURPOSE: A growth method of a germanium single crystal thin film having a negative photoconductive property and an optical detector using the same are provided to improve a penetration dislocation density and a surface roughness by forming the germanium single crystal thin film of a high grade on a silicon substrate. CONSTITUTION: A germanium thin film is grown up(S11) on the silicon substrate in a low temperature. The germanium thin film is grown up by increasing temperature(S12). The germanium thin film is grown up(S13) in the high temperature. Each growth step is processed using a low pressure chemical vapor deposition. The deposition rate at the increasing temperature germanium growth is similar to the deposition rate at the low temperature germanium growth.