METHOD OF ELECTRODES FABRICATION FOR SEMICONDUCTOR DEVICES

摘要

PURPOSE: A manufacturing method of the silicon carbide semiconductor device is provided to improve a movement characteristic of the device by reducing a specific contact resistance with maximizing a contact area of an electrode. CONSTITUTION: A spacer insulating film(21-1) is formed on the sidewall of a concavo-convex(11) with mixing a front side formation of the insulating film and an anisotropy etching process. An electrode is simultaneously formed on an upper and a lower part of the concavo-convex exposed a semiconductor material with a thermal process after forming a predetermined metal film(51) on the front. The metal film is selectively removed remaining on the spacer insulating film using a wet etching or a dry etching process. The silicon carbide semiconductor device is a junction field effect transistor. The silicon carbide semiconductor device is a metal-insulating layer field effect transistor.