| 摘要 |
PURPOSE: An image sensor and a manufacturing method thereof are provided to improve a transfer efficiency of a photo charge with connecting a wiring of a readout circuit and an image sensing unit by a metal pattern. CONSTITUTION: A semiconductor substrate(100) including a read out circuit is prepared. A wiring and an inter-insulating layer(160) are formed on the semiconductor substrate. A lower electrode layer(240) is formed on the inter-insulating layer. An image sensing unit(200) is formed on the lower electrode layer. A first via-hole(270) exposes the lower electrode layer. A barrier pattern(285) is formed on the sidewall of the first via-hole. A second via-hole(290) exposes the third wiring.
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