发明名称 |
METHOD FOR MANUFACTURING WAFER IMPROVED IN NANOTOPOGRAPHY |
摘要 |
<p>PURPOSE: A manufacturing method of a wafer improved a nanotopography is provided to omit a BTP process of improving the nanotopography by eliminating micro-bending by an etching existing on a wafer back side in a polishing process. CONSTITUTION: A slicing process for thinly cutting ingot to a wafer shape is operated. A lapping process for mechanically training both sides of the wafer cutting is operated. An etching process for eliminating a faulty and a damage caused by the lapping is operated. A polishing process for polishing the surface of the wafer is operated. The etching process is composed of an alkali etching process by an alkaline solution. The execution result(b) is much better than comparison example(a).</p> |
申请公布号 |
KR20100063409(A) |
申请公布日期 |
2010.06.11 |
申请号 |
KR20080121916 |
申请日期 |
2008.12.03 |
申请人 |
SILTRON INC. |
发明人 |
LEE, SUNG HWAN;LEE, SEUNG WOOK;HONG, YOUNG HO |
分类号 |
H01L21/3063;H01L21/027 |
主分类号 |
H01L21/3063 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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