| 摘要 |
A semiconductor memory which includes a semiconductor substrate, a plurality of memory cells, and a plurality of active regions disposed in the substrate between adjacent ones of the memory cells. At least two contact electrodes are disposed between adjacent ones of the memory cells and each being connected to one of the active regions, and a contact member is connected to one of the contact electrodes and extending over a gate electrode of a memory cell disposed adjacent to the one contact electrode. Faults can be detected in the memory cells due to particles located between the various insulator and electrode layers in the gate electrode structure, or between the substrate and the gate insulator of the memory cell.
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