发明名称 |
Transistor and method of manufacturing the same |
摘要 |
Example embodiments provide a transistor and a method of manufacturing the same. The transistor may include a channel layer formed of an oxide semiconductor and a gate having a three-dimensional structure. A plurality of the transistors may be stacked in a perpendicular direction to a substrate. At least some of the plurality of transistors may be connected to each other.
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申请公布号 |
US2010140608(A1) |
申请公布日期 |
2010.06.10 |
申请号 |
US20090458251 |
申请日期 |
2009.07.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK SUNG-HO;KIM CHANG-JUNG;SONG I-HUN;KIM SANG-WOOK;PARK JAE-CHUL |
分类号 |
H01L29/786;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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