NONVOLATILE MEMORY ELEMENT

摘要

Disclosed is a nonvolatile memory element provided with a first electrode (103), a second electrode (109), and a variable resistance layer (106) which is placed between the first electrode and the second electrode and has the resistance reversibly varied on the basis of an electrical signal applied between the first electrode and the second electrode. The first electrode and/or the second electrode is provided with a platinum-containing layer (107) containing platinum. The variable resistance layer is provided with at least a first oxygen-depleted transition metal oxide layer (104) not in physical contact with the platinum-containing layer, and a second oxygen-depleted transition metal oxide layer (105) in physical contact with the platinum-containing layer and positioned between the first oxygen-depleted transition metal oxide layer and the platinum-containing layer. When the oxygen-depleted transition metal oxide contained in the first oxygen-depleted transition metal oxide layer is represented by MOx, and the oxygen-depleted transition metal oxide contained in the second oxygen-depleted transition metal oxide layer is represented by MOy, x < y is satisfied, and the platinum-containing layer has a film thickness of at least 1 nm and no more than 23 nm, and is in physical contact with the variable resistance layer.