发明名称 METHOD OF MAKING CASCADE SOLAR CELLS (VERSIONS)
摘要 FIELD: physics. ^ SUBSTANCE: method of making solar cells involves making a top solar cell based on a multilayer semiconductor layer of GalnP/Ga(ln)As/Ge, partial local etching of a germanium substrate on the rear side under the photosensitive area of the semiconductor plate, or complete etching of the germanium substrate of the top solar cell and mechanical docking with the bottom solar cell based on a semiconductor plate of InAs or GaSb/GaAISb. Partial local etching of the germanium substrate is carried out through a photoresist mask through electrochemical etching. ^ EFFECT: increased efficiency of solar cells due to more efficient conversion of the solar spectrum and reduced optical losses when infrared radiation passes through the substrate of the top solar cell. ^ 18 cl, 5 dwg, 12 ex
申请公布号 RU2391745(C1) 申请公布日期 2010.06.10
申请号 RU20090103148 申请日期 2009.01.23
申请人 UCHREZHDENIE ROSSIJSKOJ AKADEMII NAUK FIZIKO-TEKHNICHESKIJ INSTITUT IM. A.F. IOFFE RAN 发明人 ANDREEV VJACHESLAV MIKHAJLOVICH;IL'INSKAJA NATAL'JA DMITRIEVNA;KALJUZHNYJ NIKOLAJ ALEKSANDROVICH;LANTRATOV VLADIMIR MIKHAJLOVICH;MALEVSKAJA ALEKSANDRA VJACHESLAVOVNA;MINTAIROV SERGEJ ALEKSANDROVICH
分类号 H01L31/18 主分类号 H01L31/18
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