发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
A semiconductor device manufacturing method includes: forming a foundation film on a semiconductor wafer; after forming the foundation film, forming a reaction layer of the semiconductor wafer and the foundation film therebetween; removing the foundation film and leaving the reaction layer on the semiconductor wafer; forming a resist film on the reaction layer; patterning the resist film; and using the patterned resist film as a mask to perform processing on the semiconductor wafer.
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申请公布号 |
US2010143849(A1) |
申请公布日期 |
2010.06.10 |
申请号 |
US20090631463 |
申请日期 |
2009.12.04 |
申请人 |
EMA TATSUHIKO;SEINO YURIKO;ITO SHINICHI;KATO HIROKAZU |
发明人 |
EMA TATSUHIKO;SEINO YURIKO;ITO SHINICHI;KATO HIROKAZU |
分类号 |
G03F7/20 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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