发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 A semiconductor device manufacturing method includes: forming a foundation film on a semiconductor wafer; after forming the foundation film, forming a reaction layer of the semiconductor wafer and the foundation film therebetween; removing the foundation film and leaving the reaction layer on the semiconductor wafer; forming a resist film on the reaction layer; patterning the resist film; and using the patterned resist film as a mask to perform processing on the semiconductor wafer.
申请公布号 US2010143849(A1) 申请公布日期 2010.06.10
申请号 US20090631463 申请日期 2009.12.04
申请人 EMA TATSUHIKO;SEINO YURIKO;ITO SHINICHI;KATO HIROKAZU 发明人 EMA TATSUHIKO;SEINO YURIKO;ITO SHINICHI;KATO HIROKAZU
分类号 G03F7/20 主分类号 G03F7/20
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