DIELECTRIC BARRIER DEPOSITION USING OXYGEN CONTAINING PRECURSOR
摘要
<p>A method is provided for depositing a dielectric barrier film including a precursor with silicon, carbon, oxygen, and hydrogen with improved barrier dielectric properties including lower dielectric constant and superior electrical properties. This method will be important for barrier layers used in a damascene or dual damascene integration for interconnect structures or in other dielectric barrier applications. In this example, specific structural properties are noted that improve the barrier performance.</p>
申请公布号
WO2010065410(A1)
申请公布日期
2010.06.10
申请号
WO2009US65867
申请日期
2009.11.25
申请人
AIR PRODUCTS AND CHEMICALS, INC.;MATZ, LAURA, M.;VRTIS, RAYMOND, NICHOLAS;O'NEILL, MARK, LEONARD;SINATORE, DINO