| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a metal polishing liquid achieving high precise polishing at high speed, by which dishing is lessened even in high-purity materials and erosion is suppressed on fine wirings to manufacture an LSI chip with improved flatness, and to provide a chemical mechanical polishing method using the liquid, which ensures high productivity even in manufacturing large-scale substrates. Ž<P>SOLUTION: The metal polishing liquid used for chemical mechanical flattening of semiconductor devices contains (A) a nonionic surfactant having a poly(oxyalkylene) group in its molecule and having an HLB value within a range of 12-18, (B) one or more nonionic surfactants selected from the group consisting of sucrose fatty acid esters and alkyl(poly)glucosides, (C) an oxidizing agent, (D) an organic acid, and (E) a heterocyclic compound. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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