| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a GaAs semiconductor wafer, smoothing an uneven shape of a wafer surface by eliminating linear unevenness due to misalignment of a wire caused by a supporting base. SOLUTION: In the method of manufacturing a GaAs semiconductor wafer W, a single crystal ingot 13 of GaAs is adhered and fixed on the supporting base 14, is pressed to a travelling wire saw 10 to slice the ingot. The supporting base 14 is formed of selected material which mainly contains alumina and has hardness in a range of shore D hardness 32-36. The single crystal ingot 13 is bonded and fixed on the selected supporting base 14, is cut by the wire saw 10 from an upper part of the single crystal ingot 13, and a lower part including a part of the supporting base 14 is cut to slice the single crystal ingot 13. COPYRIGHT: (C)2010,JPO&INPIT |
