| 摘要 |
A semiconductor device manufacturing method and a substrate processing apparatus are provided to reduce contaminants generating due to striping of an oxide film formed on a silicon carbide member. The manufacturing method includes: loading a substrate into a silicon carbide reaction tube; forming an oxide film on the substrate by supplying oxidizing gas into the reaction tube and causing thermal oxidation; unloading the processed substrate from the reaction tube; and in a state where the processed substrate is unloaded from the reaction tube, after increasing an inside temperature of the reaction tube until temperature of an oxide film formed on an inner wall of the reaction tube through the thermal oxidation is increased to at least a temperature corresponding to a strain point of the oxide film, decreasing the inside temperature of the reaction tube to below a temperature at which the processed substrate is unloaded from the reaction tube.
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