INGOT FORMED FROM BASIC INGOTS, WAFER MADE FROM SAID INGOT, AND ASSOCIATED METHOD

摘要

The invention relates to a method for manufacturing a heterostructure, particularly for use in the electronic, optical, or optoelectronic fields, said method including the following steps: implanting atomic species inside a first so-called "donor" substrate (7) so as to form an embrittlement area (71) therein; assembling a second so-called "recipient" substrate (R) on the donor substrate; detaching the rear portion of said donor substrate along the embrittlement area (71) so that a thin layer of interest is customized on the recipient substrate (R), characterized in that an ingot (7) or an ingot section formed from at least two basic ingots assembled together along two of the respective complementary longitudinal surfaces thereof is used as the donor substrate.