| 摘要 |
Disclosed are a semiconductor light emitting device. The semiconductor light emitting device includes a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a pad under the plurality of compound semiconductor layers; an electrode layer (150) on the plurality of compound semiconductor layers; and a shock supporting member (155) disposed on the plurality of compound semiconductor layers and corresponding to the pad (170). |
