发明名称 METHOD OF MAKING DIELECTRIC LAYER CONTAINING NANOCRYSTALS
摘要 FIELD: physics. ^ SUBSTANCE: in the method of making a dielectric layer containing nanocrystals, an initial dielectric film containing material for forming nanocrystals is made on a substrate. The initial dielectric film undergoes laser treatment which causes aggregation of the material for forming nanocrystals in the said film and, consequently, formation of the nanocrystals. Pulsed radiation with pulse duration and energy density which enable crystallisation phase transition is used during laser treatment, where the said phase transition is stimulated by the electron-hole plasma without transmission of energy to the dielectric lattice, with average radiation wavelength which ensures absorption on the entire thickness of the initial film. ^ EFFECT: wider range of substrates and initial dielectric films for making device structures. ^ 9 cl, 4 dwg, 7 ex
申请公布号 RU2391742(C1) 申请公布日期 2010.06.10
申请号 RU20090104889 申请日期 2009.02.12
申请人 UCHREZHDENIE ROSSIJSKOJ AKADEMII NAUK INSTITUT FIZIKI POLUPROVODNIKOV IM. A.V. RZHANOVA SIBIRSKOGO OTDELENIJA RAN 发明人 VOLODIN VLADIMIR ALEKSEEVICH;KORCHAGINA TAISIJA TARASOVNA
分类号 B82B3/00;H01L21/326 主分类号 B82B3/00
代理机构 代理人
主权项
地址