| 摘要 |
PURPOSE: An image sensor and a manufacturing method thereof are provided to increase the light receiving area of a photo diode by forming a gate electrode into a three-dimensional structure. CONSTITUTION: An element isolation layer is formed on a semiconductor substrate. A plurality of photo diodes(101, 102) is arranged on the semiconductor substrate. A plurality of transistors(111,112) is adjacently located to the photo diode. The transistor is formed on the upper side of the semiconductor substrate and the upper side of the element isolation layer. A stepped part due to the height differences between the upper sides of the element isolation layer and the semiconductor substrate is formed on the semiconductor substrate. The gate electrode of the transistor is formed on the stepped part.
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