| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for evaluating a semiconductor wafer, wherein a fine projecting crystal defect recently attracting attentions, in particular a PID, and foreign matter can be distinguished and evaluated in a short time with high accuracy and high sensitivity. SOLUTION: When LPDs on a surface of a semiconductor wafer are measured by using a laser surface inspection device having an incident system with two kinds of incident angles and a detection system with two kinds of detection angles, and the LPDs measured are classified into a crystal defect on the surface of the semiconductor wafer and foreign matter on the surface of the semiconductor wafer, in addition to conventional determination using a detected size ratio of low angle incidence/low angle detection to low angle incidence/high angle detection or high angle incidence/low angle detection to high angle incidence/high angle detection, the defects are classified while also taking account of a ratio of low angle incidence/low angle detection to high angle incidence/high angle detection wherein the incident system and the detection system are different. Detection sensitivity in each measurement mode is set to be a predetermined constant ratio. COPYRIGHT: (C)2010,JPO&INPIT |
