| 摘要 |
PROBLEM TO BE SOLVED: To facilitate a method of manufacturing a thin-film transistor while suppressing the occurrence of an optical leak current. SOLUTION: The thin-film transistor includes: on a substrate (10), a base film (12) having a projection step (12a), extending in a first direction; on a surface, a semiconductor layer (30a) formed on the base film in a longitudinal state and in a second direction crossing the first direction, having a step corresponding to the projection step on a surface, and locally having a narrow width in a channel width direction in a region overlapping the projection step; and a gate electrode (30b) arranged opposite the semiconductor layer with a gate insulating film (13) interposed. COPYRIGHT: (C)2010,JPO&INPIT |
