Method for characterizing laser emission properties of edge-emitting semiconductor laser, for wafer testing of edge semiconductor laser elements, involves structuring semiconductor blocks for production of edge-emitting individual laser

摘要

The method involves structuring semiconductor blocks for production of edge-emitting individual laser, where a diffraction structure is produced in one of the semiconductor blocks on the surface turned away from the wafer (1). A current flow is produced in one of the semiconductor blocks having a diffraction structure and laser light produced in the semiconductor block. An independent claim is also included for a wafer, particularly semiconductor wafer.