SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A semiconductor device is provided with: a first interlayer insulating film (10) formed on a semiconductor substrate; a second interlayer insulating film (14) formed on the first interlayer insulating film (10); and first wiring (21) formed on an upper region of the second interlayer insulating film (14).  The second interlayer insulating film (14) is composed of a porous region (14B) including holes (14b), and a non-porous region (14A).  The porous region (14B) is formed at a region positioned on the circumference of the first wiring (21) on the second interlayer insulating film (14).  The non-porous region (14A) is formed at least between the first interlayer insulating film (10) and the porous region (14B).