| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which suppresses electromigration. Ž<P>SOLUTION: The semiconductor device includes: a semiconductor substrate on which a semiconductor element is formed; an interlayer dielectric which is formed above the semiconductor substrate, contains moisture, and has a recessed part; a first barrier metal layer formed on an inner surface of the recessed part and having crystallinity of either one of amorphous or polycrystal; a second barrier metal layer formed on the first barrier metal layer and having other crystallinity of amorphous or polycrystal; a copper wiring formed on the second barrier metal layer; a copper diffusion preventing insulation film covering the copper wiring and formed on the interlayer dielectric; and a metal oxide layer formed on an interface of the copper wiring and copper diffusion preventing insulation film. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
