发明名称 |
METHOD FOR FORMING METAL OXIDE AND METHOD FOR FORMING TRANSISTOR STRUCTURE WITH THE SAME |
摘要 |
Provided is a method for forming a metal oxide. A method for forming a metal oxide according to embodiments of the present invention includes preparing a metal oxide precursor solution including a dopant chemical species, preparing an alcohol-based solution including a basic chemical species, reacting the alcohol-based solution with the metal oxide precursor solution to form a reactant, and purifying the reactant to form a metal oxide.
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申请公布号 |
US2010144088(A1) |
申请公布日期 |
2010.06.10 |
申请号 |
US20090631206 |
申请日期 |
2009.12.04 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
OH JIYOUNG;PARK JONGHYURK;KANG SEUNG YOUL;KIM CHUL AM;YOU IN-KYU;CHO KYOUNG IK |
分类号 |
H01L21/328;C01G9/02 |
主分类号 |
H01L21/328 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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