发明名称 METHOD FOR FORMING METAL OXIDE AND METHOD FOR FORMING TRANSISTOR STRUCTURE WITH THE SAME
摘要 Provided is a method for forming a metal oxide. A method for forming a metal oxide according to embodiments of the present invention includes preparing a metal oxide precursor solution including a dopant chemical species, preparing an alcohol-based solution including a basic chemical species, reacting the alcohol-based solution with the metal oxide precursor solution to form a reactant, and purifying the reactant to form a metal oxide.
申请公布号 US2010144088(A1) 申请公布日期 2010.06.10
申请号 US20090631206 申请日期 2009.12.04
申请人 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 OH JIYOUNG;PARK JONGHYURK;KANG SEUNG YOUL;KIM CHUL AM;YOU IN-KYU;CHO KYOUNG IK
分类号 H01L21/328;C01G9/02 主分类号 H01L21/328
代理机构 代理人
主权项
地址