发明名称 |
HIGH RATE DEPOSITION OF THIN FILMS WITH IMPROVED BARRIER LAYER PROPERTIES |
摘要 |
An atomic layer deposition (ALD) method is utilized to deposit a thin film barrier layer of a metal oxide, such as titanium dioxide, onto a substrate. Excellent barrier layer properties can be achieved when the titanium oxide barrier is deposited by ALD at temperatures below approximately 100° C. Barriers less than 100 angstroms thick and having a water vapor transmission rate of less than approximately 0.01 grams/m2/day are disclosed, as are methods of manufacturing such barriers.
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申请公布号 |
US2010143710(A1) |
申请公布日期 |
2010.06.10 |
申请号 |
US20090632749 |
申请日期 |
2009.12.07 |
申请人 |
LOTUS APPLIED TECHNOLOGY, LLC |
发明人 |
DICKEY ERIC R.;BARROW WILLIAM A. |
分类号 |
B32B5/00;B05D1/00;B05D3/04;C23C16/40;C23C16/513 |
主分类号 |
B32B5/00 |
代理机构 |
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代理人 |
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地址 |
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