发明名称 |
SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREFOR |
摘要 |
Disclosed herein is a solid-state imaging device including a first transfer electrode portion and a second transfer electrode portion having a pattern area rate higher than that of the first transfer electrode portion. The first transfer electrode portion includes a plurality of first transfer electrodes having a single-layer structure of metal material. The second transfer electrode portion includes a plurality of second transfer electrodes having a single-layer structure of polycrystalline silicon or amorphous silicon.
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申请公布号 |
US2010140667(A1) |
申请公布日期 |
2010.06.10 |
申请号 |
US20090612466 |
申请日期 |
2009.11.04 |
申请人 |
SONY CORPORATION |
发明人 |
TAKIMOTO KAORI;OKADA MASAYUKI;TAKEDA TAKESHI |
分类号 |
H01L27/148;H01L21/28 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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