发明名称 |
THE CAPACITORLESS DRAM AND METHOD FOR FABRICATING THEREOF |
摘要 |
<p>PURPOSE: A capacitor-less DRAM and a method for manufacturing the same are provided to improve the hole-storage capacity due to a hole-barrier by forming a continuous germanium layers or a non-continuous dots through an ion implantation method and a heat treatment process. CONSTITUTION: A source(105), a channel, and a drain(106) are successively formed on a substrate(100). A gate insulating layer(103) is formed on the channel. A gate is formed on the gate insulating layer. A germanium layer or a germanium dot is formed in the channel. The gate insulating layer is made of a silicon oxide, a nitride film, an aluminum oxide, a hafnium oxide, or a zinc oxide.</p> |
申请公布号 |
KR20100062502(A) |
申请公布日期 |
2010.06.10 |
申请号 |
KR20080121159 |
申请日期 |
2008.12.02 |
申请人 |
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
CHOI, YANG KYU;HAN, JIN WOO;KIM, DONG HYUN;KIM, JEONG WOO;KIM, JIN SOO;SONG, MYEONG HO;OH, JEA SUB;PARK, YUN CHANG |
分类号 |
H01L21/8242;H01L21/336;H01L27/108;H01L29/78 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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