| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device in which an operation time is shortened by performing parallel control of a preparation sequence and a stress sequence of an operation sequence. <P>SOLUTION: A command buffer 20 is configured to continuously receive a plurality of commands and output them to an internal operation control part 10. When receiving an initial command signal, the control part 10 waits by the prescribed preparation sequence period for starting operation of the initial command, when the preparation period is finished and a control signal for executing the command only in the stress sequence period in which the initial command is performed, the control part 10 outputs a next command request signal indicating that the preparation sequence period is finished and a next command can be received to the command buffer 20, when the command buffer 20 receives the next command request signal and outputs the next command signal, the internal operation control part 10 executes a preparation sequence of the received next command within the stress sequence period in which the initial command is being performed. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
