| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of preparing a BiTe-based thin film, capable of exhibiting proper thermoelectric characteristics, and to provide an infrared sensor employing the BiTe-based thin film having proper thermoelectric characteristics. Ž<P>SOLUTION: The method of preparing the BiTe-based thin film 3 includes steps of forming the BiTe-based thin film containing at least Bi and Te as active ingredients at 200°C or lower, and thereafter heating it in an Ar-H<SB>2</SB>atmosphere to crystallize the thin film. A heat treatment temperature in the Ar-H<SB>2</SB>atmosphere is 300-500°C. In addition, a pattern of the BiTe-based thin film is formed on a substrate 1 by a lift-off method using resist at 200°C or lower, and the obtained pattern of the BiTe-based thin film is heat-treated, together with the substrate 1 in the Ar-H<SB>2</SB>atmosphere for crystallization. The infrared sensor employing the BiTe-based thin film 3, obtained by the preparing method, is provided. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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