发明名称 |
CRYSTAL NUCLEUS MASK, METHOD OF MANUFACTURING CRYSTAL NUCLEUS MASK, METHOD OF MANUFACTURING POLYCRYSTAL SILICON LAYER, SEMICONDUCTOR DEVICE, AND ELECTRO-OPTIC DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To solve a problem wherein it is difficult to press and transcribe a catalyst substance on anα-Si layer having an area larger than a single crystal silicon substrate with a diameter up to 30 cm by using a transcription substrate when a crystal nucleus mask for attaching a catalyst substance for facilitating crystal nucleus formation onα-Si as dots, is formed, in which the single crystal silicon substrate is used to form a projected structure along a crystal surface and the catalyst substance is attached on its end. SOLUTION: The crystal nucleus mask 1 is structured by irradiating theα-Si layer on a glass substrate 10 with an excimer laser beam to arrange a projection part 13 having regular alignment, and forming a catalyst metal layer to cover the projection part 13. The glass substrate 10 having a diagonal longer than 1 m is easily available. Thus, the catalyst substance for facilitating the crystal nucleus formation is attached on theα-Si as dots on a large (a diagonal of approximately 1 m) substrate 21 to be transcribed. COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010129631(A) |
申请公布日期 |
2010.06.10 |
申请号 |
JP20080300527 |
申请日期 |
2008.11.26 |
申请人 |
SEIKO EPSON CORP |
发明人 |
SUGIMOTO YOHEI |
分类号 |
H01L21/20;G02F1/1368;H01L21/336;H01L29/786 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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