发明名称 CRYSTAL NUCLEUS MASK, METHOD OF MANUFACTURING CRYSTAL NUCLEUS MASK, METHOD OF MANUFACTURING POLYCRYSTAL SILICON LAYER, SEMICONDUCTOR DEVICE, AND ELECTRO-OPTIC DEVICE
摘要 PROBLEM TO BE SOLVED: To solve a problem wherein it is difficult to press and transcribe a catalyst substance on anα-Si layer having an area larger than a single crystal silicon substrate with a diameter up to 30 cm by using a transcription substrate when a crystal nucleus mask for attaching a catalyst substance for facilitating crystal nucleus formation onα-Si as dots, is formed, in which the single crystal silicon substrate is used to form a projected structure along a crystal surface and the catalyst substance is attached on its end. SOLUTION: The crystal nucleus mask 1 is structured by irradiating theα-Si layer on a glass substrate 10 with an excimer laser beam to arrange a projection part 13 having regular alignment, and forming a catalyst metal layer to cover the projection part 13. The glass substrate 10 having a diagonal longer than 1 m is easily available. Thus, the catalyst substance for facilitating the crystal nucleus formation is attached on theα-Si as dots on a large (a diagonal of approximately 1 m) substrate 21 to be transcribed. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010129631(A) 申请公布日期 2010.06.10
申请号 JP20080300527 申请日期 2008.11.26
申请人 SEIKO EPSON CORP 发明人 SUGIMOTO YOHEI
分类号 H01L21/20;G02F1/1368;H01L21/336;H01L29/786 主分类号 H01L21/20
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