METHOD OF PROGRAMMING A NONVOLATILE MEMORY CELL BY REVERSE BIASING A DIODE STEERING ELEMENT TO SET A STORAGE ELEMENT

摘要

A method of programming a nonvolatile memory cell. The nonvolatile memory cell includes a diode steering element in series with a carbon storage element The method includes providing a first voltage to the nonvolatile memory cell. The first voltage reverse biases the diode steering element. The carbon storage element sets to a lower resistivity state.